SiC-8 SIC Resistance-Heated Dual Heater Single Crystal Growth Furnace
Factory Direct Sales, Lower Price for Bulk Purchase
● Primarily used for the growth of 8-inch 4H-N type SiC single crystals.
● The equipment incorporates crystal growth technology, seed crystal bonding technology, temperature field control technology, and atmosphere control technology.
● Target Users: SiC substrate manufacturers, semiconductor R&D institutes, and third-generation semiconductor material suppliers.
Crystal Growth Furnaces
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The SiC-8 crystal growth equipment is an advanced solution designed for high-quality 4H-N type silicon carbide crystal growth. It integrates resistive heating technology and precise temperature field control to ensure high efficiency and uniformity in crystal production.
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