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Crystal Growth Equipment
Accurate, efficient, and reliable crystal growth equipment
Our crystal growth furnace takes 2400℃ ultra-high temperature and 10-³Pa ultra-high vacuum as the core, equipped with ±5℃ precision temperature control and ±5Pa low pressure dynamic balance system, breaking through the limit of traditional process, providing atomic-level accurate growth environment for semiconductor and optoelectronic materials field. A single cycle can be completed in 9 days 30mm ingot growth with high efficiency, yield rate of more than 75%, stable operation of the equipment for more than 8,000 hours a year, has empowered 15 global science and technology giants to achieve mass production of cutting-edge materials, millimetre consistency and nano-purity redefined precision manufacturing - control of the perfect arrangement of each atom.
Why Choose Us
Taoxia is a leading manufacturer of silicon carbide materials and single crystal growth equipment in China. With thoughtful service and excellent product quality, our products can meet the ever-changing needs of today's customers.
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Customer Reviews
Check out what our customers say about us
When developing a new generation of photovoltaic cutting blades, Taoxia engineers took the initiative to provide free particle size distribution optimization services, which reduced our wire saw consumables costs by 18%. Its patented anti-oxidation packaging ensures zero agglomeration after 60 days of sea transportation. The technical response speed even exceeds that of local suppliers!
Kenji Sato
As a semiconductor material supplier, we have almost stringent requirements for the purity of silicon carbide. Taoxia's SiC powder batch stability far exceeds expectations, and the 99.999% purity test has zero error. What's more surprising is that the urgent order is delivered within 48 hours, which solves our production line material shortage crisis. Highly recommended to precision manufacturing colleagues!
Aisha Al-Farsi
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